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? semiconductor components industries, llc, 2017 june, 2018 ? rev. 2 1 publication order number: nxh160t120l2q1/d NXH160T120L2Q1PG, nxh160t120l2q1sg q1pack module this high ? density, integrated power module combines high ? performance igbts with rugged anti ? parallel diodes. features ? extremely efficient trench with fieldstop technology ? low switching loss reduces system power dissipation ? module design offers high power density ? low inductive layout ? q1pack package with press ? fit and solder pins typical applications ? solar inverters ? uninterruptable power supplies schematic 17,18,19,20 21 22 1 2 15,16 7,8 3,4,5,6 14 13 10 9 23,24,25,26 27,28,29,30 11 12 t2 d2 d3 t3 t1 t4 d1 d5 d6 d7 d8 ntc d4 www. onsemi.com device marking q1pack case 180ad press fit see detailed ordering and shipping information on page 14 of this data sheet. ordering information pin assignments package picture q1pack case 180aq solder pins nxh160t120l2q1xg atyyww x = p or s g = pb ? free package at = assembly & test site code yyww = year and work week code
NXH160T120L2Q1PG, nxh160t120l2q1sg www. onsemi.com 2 table 1. absolute maximum ratings rating symbol value unit halfbridge igbt inverse diode (d1, d4) peak repetitive reverse voltage v rrm 1200 v forward current, dc @ t h = 80 c i f 20 a repetitive peak forward current t pulse limited by t jmax i frm 80 a power dissipation per diode t j = t jmax t h = 80 c p tot 51 w maximum junction temperature t j 150 c halfbridge igbt (t1, t4) collector ? emitter voltage v ces 1200 v collector current @ t h = 80 c i c 140 a pulsed collector current, t pulse limited by t jmax i cm 480 a power dissipation per igbt t j = t jmax t h = 80 c p tot 280 w gate ? emitter voltage v ge 20 v short circuit withstand time v ge = 15 v, v ce = 600 v, t j 150 c t sc 10 s maximum junction temperature t j 150 c np diode (d6, d7) peak repetitive reverse voltage v rrm 650 v forward current, dc @ t h = 80 c i f 58 a repetitive peak forward current, t pulse limited by t jmax i frm 200 a power dissipation per diode t j = t jmax t h = 80 c p tot 89 w maximum junction temperature t j 150 c np igbt (t2, t3) collector ? emitter voltage v ces 650 v collector current @ t h = 80 c i c 83 a pulsed collector current, t pulse limited by t jmax i cm 235 a power dissipation per igbt t j = t jmax t h = 80 c p tot 117 w gate ? emitter voltage v ge 20 v short circuit withstand time v ge = 15 v, v ce = 400 v, t j 150 c t sc 5 s maximum junction temperature t j 150 c np inverse diode (d2, d3) peak repetitive reverse voltage v rrm 650 v forward current, dc @ t h = 80 c i f 17 a repetitive peak forward current, t pulse limited by t jmax i frm 68 a power dissipation per diode t j = t jmax t h = 80 c p tot 28 w maximum junction temperature t j 150 c halfbridge diode (d5, d8) peak repetitive reverse voltage v rrm 1200 v forward current, dc @ t h = 80 c (per diode) i f 45 a repetitive peak forward current, t pulse limited by t jmax i frm 180 a power dissipation per diode t j = t jmax t h = 80 c p tot 78 w
NXH160T120L2Q1PG, nxh160t120l2q1sg www. onsemi.com 3 table 1. absolute maximum ratings rating unit value symbol halfbridge diode (d5, d8) junction temperature t j 150 c thermal properties operating temperature under switching condition t vj op ? 40 to (t jmax ? 25) c storage temperature range t stg ? 40 to 125 c insulation properties isolation test voltage, t = 1 sec, 60 hz/50 hz v is 3000 v rms creepage distance 12.7 mm clearance 8.06 mm stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. table 2. electrical characteristics (t j = 25 c unless otherwise specified) parameter test conditions symbol min typ max unit halfbridge igbt inverse diode (d1, d4) characteristics forward voltage i f = 7 a, t j = 25 c i f = 7 a, t j = 125 c v f ? ? 1.46 1.49 2.7 ? v thermal resistance ? chip ? to ? heatsink thermal grease, thickness = 2 mil 2%, = 1 w/mk r thjh 1.864 c/w halfbridge igbt (t1, t4) characteristics collector ? emitter saturation voltage v ge = 15 v, i c = 160 a, t j = 25 c v ge = 15 v, i c = 160 a, t j = 125 c v ce(sat) ? ? 2.06 2.10 2.50 ? v gate ? emitter threshold voltage v ge = v ce , i c = 6 ma v ge(th) 5.0 5.80 6.50 v collector ? emitter cutoff current v ge = 0 v, v ce = 1200 v i ces ? ? 800 a gate leakage current v ge = 20 v, v ce = 0 v i ges ? ? 800 na turn ? on delay time t j = 125 c v ce = 350 v, i c = 100 a v ge = 15 v, r g = 4 t d(on) ? 55 ? ns rise time t r ? 50 ? turn ? off delay time t d(off) ? 430 ? fall time t f ? 105 ? turn on switching loss e on ? 2.73 ? mj turn off switching loss e off ? 3.58 ? input capacitance v ce =25 v. v ge = 0 v. f = 10 khz c ies ? 38164 ? pf output capacitance c oes ? 644 ? reverse transfer capacitance c res ? 784 ? gate charge total v ce = 600 v, i c = 160 a, v ge = 15 v q g ? 1664 ? nc thermal resistance ? chip ? to ? heatsink thermal grease, thickness = 2 mil 2%, = 1 w/mk r thjh 0.337 c/w np diode (d6, d7) characteristics forward voltage v ge = 0 v, i f = 150 a, t j = 25 c v ge = 0 v, i f = 150 a, t j = 125 c v f ? ? 2.15 2.36 2.60 ? v reverse leakage current v ce = 650 v, v ge = 0 v ir ? ? 200 a reverse recovery time t j = 125 c v ce = 350 v, i c = 100 a v ge = 15 v, r g = 4 trr ? 225 ? ns reverse recovery charge qrr ? 6.15 ? c peak reverse recovery current irrm ? 85 ? a peak rate of fall of recovery current di/dtmax ? 1315 ? a/ s reverse recovery energy err ? 1.336 ? mj thermal resistance ? chip ? to ? heatsink thermal grease, thickness = 2 mil 2%, = 1 w/mk rthjh ? 1.07 ? c/w
NXH160T120L2Q1PG, nxh160t120l2q1sg www. onsemi.com 4 table 2. electrical characteristics (t j = 25 c unless otherwise specified) parameter unit max typ min symbol test conditions np igbt (t2, t3) collector ? emitter saturation voltage v ce = 15 v, i c = 150 a, t j = 25 c v ce = 15 v, i c = 150 a, t j = 125 c v ce(sat) ? ? 1.65 1.84 2.0 ? v gate ? emitter threshold voltage v ge = v ce , i c = 8 ma v ge(th) 5.0 6.10 6.90 v collector ? emitter cutoff current v ge = 0 v, v ce = 650 v i ces ? ? 400 a gate leakage current v ge = 20 v, v ce = 0 v i ges ? ? 800 na turn ? on delay time t j = 125 c v ce = 350 v, i c = 100 a v ge = 15 v, r g = 4 t d(on) ? 46 ? ns rise time t r ? 48 ? turn ? off delay time t d(off) ? 250 ? fall time t f ? 105 ? turn on switching loss e on ? 1.245 ? mj turn off switching loss e off ? 2.525 ? input capacitance v ce = 25 v, v ge = 0 v, f = 10 khz c ies ? 19380 ? pf output capacitance c oes ? 570 ? reverse transfer capacitance c res ? 496 ? gate charge total v ce = 480 v, i c = 150 a, v ge = 15 v q g ? 790 ? nc thermal resistance ? chip ? to ? heatsink thermal grease, thickness = 2 mil 2%, = 1 w/mk r thjh ? 0.81 ? c/w np inverse diode (d2, d3) forward voltage v ge = 0 v, i f = 15 a, t j = 25 c v ge = 0 v, i f = 15 a, t j = 125 c v f ? ? 1.60 1.59 2.20 ? v thermal resistance ? chip ? to ? heatsink thermal grease, thickness = 2 mil 2%, = 1 w/mk r thjh 3.43 c/w halfbridge diode (d5, d8) forward voltage v ge = 0 v, i f = 150 a, t j = 25 c v ge = 0 v, i f = 150 a, t j = 125 c v f ? ? 2.50 2.80 3.50 ? v reverse leakage current v ce = 1200 v, v ge = 0 v ir ? ? 200 a reverse recovery time t j = 125 c v ce = 350 v, i c = 100 a v ge = 15 v, r g = 4 trr ? 405 ? ns reverse recovery charge qrr ? 15.5 ? c peak reverse recovery current irrm ? 220 ? a peak rate of fall of recovery current di/dtmax ? 5440 ? a/ s reverse recovery energy err ? 5.225 ? mj thermal resistance ? chip ? to ? heatsink thermal grease, thickness = 2 mil 2%, = 1 w/mk rthjh ? 1.213 ? c/w thermistor characteristics nominal resistance r 25 ? 22 ? k nominal resistance t = 100 c r 100 ? 1486 ? deviation of r25 d r/r ? 5 ? 5 % power dissipation p d ? 200 ? mw power dissipation constant ? 2 ? mw/k b ? value b(25/50), tol 3% ? 3950 ? k b ? value b(25/100), tol 3% ? 3998 ? k
NXH160T120L2Q1PG, nxh160t120l2q1sg www. onsemi.com 5 typical characteristics ? half bridge igbt and neutral point forward diode figure 1. typical output characteristics figure 2. typical output characteristics v ce , collector ? emitter voltage (v) v ce , collector ? emitter voltage (v) 5 4 3 2 1 0 0 50 100 150 200 250 300 5 4 3 2 1 0 0 50 100 150 200 250 300 figure 3. typical transfer characteristics figure 4. diode forward characteristics v ge , gate ? emitter voltage (v) v f , forward voltage (v) 12 10 8 6 4 2 0 0 10 20 40 50 70 80 100 5 4 3 2 1 0 0 50 100 150 200 250 300 figure 5. typical switching loss vs. ic figure 6. typical switching loss vs. rg ic (a) rg ( ) 180 140 120 100 80 40 20 0 0 2000 4000 6000 8000 10,000 20 15 10 5 0 0 2000 4000 6000 8000 10,000 i c , collector current (a) i c , collector current (a) i c , collector current (a) i f , forward current (a) switching loss ( j) switching loss ( j) 125 c 25 c 10 v 9 v 8 v 7 v t j = 25 c v ge = 17 v ? 11 v 10 v 9 v 8 v t j = 125 c v ge = 17 v ? 11 v 7 v t j = 25 c t j = 125 c 30 60 90 60 160 200 e off e on e off e on v ge = 15 v t j = 125 c v ce = 350 v i c = 100 a v ge = 15 v t j = 125 c v ce = 350 v rg = 4
NXH160T120L2Q1PG, nxh160t120l2q1sg www. onsemi.com 6 typical characteristics ? half bridge igbt and neutral point forward diode t r figure 7. typical reverse recovery energy loss vs. ic figure 8. typical reverse recovery energy loss vs. rg ic (a) rg ( ) 200 150 100 50 0 0 1000 2000 3000 4000 5000 6000 20 15 10 5 0 0 1000 2000 3000 4000 5000 6000 figure 9. typical switching time vs. ic figure 10. typical switching time vs. rg rg ( ) rg ( ) 180 140 120 100 80 40 20 0 0 50 100 200 250 300 400 450 20 15 10 5 0 0 200 400 600 800 1000 1200 figure 11. typical reverse recovery time vs. ic figure 12. typical reverse recovery time vs. rg ic (a) rg ( ) 160 140 120 100 60 40 20 0 0 50 100 150 200 250 300 20 15 10 5 0 0 100 200 300 400 500 600 e rr , reverse recovery energy ( j) time (ns) time (ns) t rr , switching time (ns) t rr , switching time (ns) v ge = 15 v t j = 125 c v ce = 350 v i c = 100 a v ge = 15 v t j = 125 c v ce = 350 v rg = 4 e rr , reverse recovery energy ( j) v ge = 15 v t j = 125 c v ce = 350 v rg = 4 60 160 200 150 350 t f t d(on) t d(off) v ge = 15 v t j = 125 c v ce = 350 v i c = 100 a v ge = 15 v t j = 125 c v ce = 350 v rg = 4 v ge = 15 v t j = 125 c v ce = 350 v i c = 100 a t r t f t d(on) t d(off) 80 180 200
NXH160T120L2Q1PG, nxh160t120l2q1sg www. onsemi.com 7 typical characteristics ? half bridge igbt and neutral point forward diode figure 13. typical reverse recovery charge vs. ic figure 14. typical reverse recovery charge vs. rg ic (a) rg ( ) 180 140 120 100 60 40 20 0 0 2 4 6 8 10 12 20 15 10 5 0 0 2 4 6 8 10 figure 15. typical reverse recovery current vs. ic figure 16. typical reverse recovery current vs. rg ic (a) rg ( ) 180 160 120 100 60 40 20 0 0 30 60 90 120 150 20 15 10 5 0 0 30 60 90 120 150 180 210 figure 17. typical di/dt vs. ic figure 18. typical di/dt vs. rg ic (a) rg ( ) 200 140 120 100 60 40 20 0 0 500 1000 1500 2000 3000 3500 4000 20 15 10 5 0 0 1000 2000 3000 4000 5000 q rr ( c) q rr ( c) i rrm (a) i rrm (a) di/dt (a/ s) di/dt (a/ s) v ge = 15 v t j = 125 c v ce = 350 v i c = 100 a 80 160 180 2500 80 160 200 v ge = 15 v t j = 125 c v ce = 350 v rg = 4 v ge = 15 v t j = 125 c v ce = 350 v rg = 4 v ge = 15 v t j = 125 c v ce = 350 v rg = 4 v ge = 15 v t j = 125 c v ce = 350 v i c = 100 a v ge = 15 v t j = 125 c v ce = 350 v i c = 100 a 80 140 200
NXH160T120L2Q1PG, nxh160t120l2q1sg www. onsemi.com 8 typical characteristics ? half bridge igbt and neutral point forward diode figure 19. transient thermal impedance (half bridge igbt) on ? pulse width (s) 1e ? 05 1e ? 06 1e ? 06 1e ? 05 v ce , collector ? emitter voltage (v) q g , gate charge (nc) 10,000 1000 100 10 1 0.01 0.1 1 10 100 1000 1800 1500 1200 900 600 300 0 0 2 4 6 8 12 14 16 square ? wave peak r(t) ( c/w) i c , collector current (a) v ge , gate voltage (v) 10 600 v dc operation 1 ms 100 s 50 s single nonrepetitive pulse t c = 25 c curves must be derated linearly with increase in temperature 1e ? 04 1e ? 04 1e ? 03 1e ? 02 1e ? 01 1e+00 1e ? 03 1e ? 02 1e ? 01 1e+00 1e+01 single pulse dut = 50% 20% 10% 5% 2% figure 20. transient thermal impedance (neutral point forward diode) on ? pulse width (s) 1e ? 05 1e ? 06 square ? wave peak r(t) ( c/w) 1e ? 04 1e ? 03 1e ? 02 1e ? 01 1e+01 1e ? 03 1e ? 02 1e ? 01 1e+00 1e+01 single pulse dut = 50% 20% 10% 5% 2% figure 21. safe operating area figure 22. gate voltage vs. gate charge 1e+00
NXH160T120L2Q1PG, nxh160t120l2q1sg www. onsemi.com 9 typical characteristics ? neutral point igbt and half bridge forward diode 7 v figure 23. typical output characteristics figure 24. typical output characteristics v ce , collector ? emitter voltage (v) v ce , collector ? emitter voltage (v) 5 4 3 2 1 0 0 50 100 150 200 300 350 400 5 4 3 2 1 0 0 50 100 150 200 300 350 400 i c , collector current (a) i c , collector current (a) 10 v 9 v 8 v 7 v t j = 25 c v ge = 17 v ? 13 v 10 v 9 v 8 v t j = 125 c v ge = 17 v ? 13 v 11 v 12 v 250 250 12 v 11 v figure 25. typical transfer characteristics figure 26. diode forward characteristics v ge , gate ? emitter voltage (v) v f , forward voltage (v) 12 10 8 6 4 2 0 0 10 30 40 50 70 80 100 4 3 2 1 0 0 30 60 90 120 150 180 figure 27. typical switching loss vs. ic figure 28. typical switching loss vs. rg ic (a) rg ( ) 180 140 120 100 80 40 20 0 0 1000 2000 3000 4000 5000 6000 20 15 10 5 0 0 1000 2000 3000 4000 5000 6000 7000 i c , collector current (a) i f , forward voltage (a) switching loss ( j) switching loss ( j) 125 c 25 c t j = 25 c t j = 125 c e off e on e off e on v ce = 350 v v ge = 15 v i c = 100 a t j = 125 c 20 60 90 60 160 200 v ce = 350 v v ge = 15 v r g = 4 t j = 125 c
NXH160T120L2Q1PG, nxh160t120l2q1sg www. onsemi.com 10 typical characteristics ? neutral point igbt and half bridge forward diode figure 29. typical reverse recovery energy loss vs. ic figure 30. typical reverse recovery energy loss vs. rg ic (a) rg ( ) 180 140 120 100 80 40 20 0 0 1000 2000 3000 5000 6000 7000 8000 20 15 10 5 0 0 1000 2000 3000 5000 6000 7000 8000 e rr , reverse recovery energy ( j) v ce = 350 v v ge = 15 v i c = 100 a t j = 125 c v ce = 350 v v ge = 15 v r g = 4 t j = 125 c 60 160 200 4000 e rr , reverse recovery energy ( j) 4000 figure 31. typical switching time vs. ic figure 32. typical switching time vs. rg ic (a) rg ( ) 180 160 120 100 80 40 20 0 0 50 100 150 200 250 300 20 15 10 5 0 0 50 150 200 300 350 400 500 figure 33. half bridge forward diode typical reverse recovery time vs. ic figure 34. half bridge forward diode typical reverse recovery time vs. rg ic (a) rg ( ) 150 100 50 0 0 100 200 300 400 500 20 15 10 5 0 0 100 200 300 400 500 time (ns) time (ns) t rr , switching time (ns) t rr , switching time (ns) t r v ge = 15 v t j = 125 c v ce = 350 v rg = 4 t f t d(on) t d(off) v ge = 15 v t j = 125 c v ce = 350 v i c = 100 a t r t f t d(on) t d(off) 60 140 200 100 250 450 v ge = 15 v t j = 125 c v ce = 350 v i c = 100 a 200 v ge = 15 v t j = 125 c v ce = 350 v rg = 4
NXH160T120L2Q1PG, nxh160t120l2q1sg www. onsemi.com 11 typical characteristics ? neutral point igbt and half bridge forward diode figure 35. half bridge forward diode typical reverse recovery charge vs. ic figure 36. half bridge forward diode typical reverse recovery charge vs. rg ic (a) rg ( ) 180 160 120 100 80 40 20 0 0 5 10 15 20 25 30 20 15 10 5 0 0 2 6 8 12 14 16 20 figure 37. typical reverse recovery current vs. ic figure 38. typical reverse recovery current vs. rg ic (a) rg ( ) 180 160 120 100 80 40 20 0 0 100 200 300 400 500 20 15 10 5 0 0 100 200 300 400 500 figure 39. typical di/dt vs. ic figure 40. typical di/dt vs. rg ic (a) rg ( ) 7 6 5 4 3 2 1 0 0 2000 4000 6000 8000 10,000 20 15 10 5 0 0 2000 4000 6000 8000 10,000 q rr , ( c) q rr , ( c) i rrm (a) i rrm (a) di/dt (a/ s) di/dt (a/ s) v ge = 15 v t j = 125 c v ce = 350 v i c = 100 a 60 140 200 4 10 18 v ge = 15 v t j = 125 c v ce = 350 v rg = 4 v ge = 15 v t j = 125 c v ce = 350 v rg = 4 v ge = 15 v t j = 125 c v ce = 350 v i c = 100 a v ge = 15 v t j = 125 c v ce = 350 v i c = 100 a 60 140 200 8 v ge = 15 v t j = 125 c v ce = 350 v rg = 4
NXH160T120L2Q1PG, nxh160t120l2q1sg www. onsemi.com 12 typical characteristics ? neutral point igbt and half bridge forward diode on ? pulse width (s) 1e ? 05 1e ? 06 1e ? 03 1e ? 02 square ? wave peak r(t) ( c/w) 1e ? 04 1e ? 01 1e+00 1e+01 1e ? 03 1e ? 02 1e ? 01 1e+00 1e+01 single pulse dut = 50% 20% 10% 5% 2% figure 41. transient thermal impedance (neutral point igbt) on ? pulse width (s) 1e ? 05 1e ? 06 1e ? 05 1e ? 02 square ? wave peak r(t) ( c/w) 1e ? 04 1e ? 01 1e+00 1e ? 03 1e ? 02 1e ? 01 1e+00 1e+01 single pulse dut = 50% 20% 10% 5% 2% figure 42. transient thermal impedance (half bridge forward diode) 1e ? 03 1e ? 04 figure 43. safe operating area v ce , collector ? emitter voltage (v) 1000 100 10 1 0.01 0.1 1 100 1000 i c , collector current (a) 10 figure 44. gate voltage vs. gate charge q g , gate charge (nc) 900 700 600 400 300 200 100 0 0 2 4 6 8 12 14 16 v ge , gate voltage (v) 500 800 10 480 v 50 s 100 s 1 ms dc operation single nonrepetitive pulse t c = 25 c curves must be derated linearly with increase in temperature
NXH160T120L2Q1PG, nxh160t120l2q1sg www. onsemi.com 13 typical characteristics ? half bridge inverse diode figure 45. transient thermal impedance figure 46. diode forward characteristics v f , forward voltage (v) 4 3 2 1 0 0 5 10 15 20 25 i f . forward current (a) 125 c 25 c on ? pulse width (s) 1e ? 05 1e ? 06 1e ? 03 1e ? 02 square ? wave peak r(t) ( c/w) 1e ? 04 1e ? 01 1e+00 1e+01 1e ? 03 1e ? 02 1e ? 01 1e+00 1e+01 single pulse dut = 50% 20% 10% 5% 2%
NXH160T120L2Q1PG, nxh160t120l2q1sg www. onsemi.com 14 typical characteristics ? neutral point inverse diode figure 47. diode forward characteristics v f , forward voltage (v) 4 3 2 1 0 0 5 10 15 20 25 i f . forward current (a) 125 c 25 c typical characteristics ? thermistor figure 48. thermistor characteristics temperature ( c) 125 105 85 65 45 25 0 4k 8k 12k 16k 20k 24k resistance ( ) ordering information orderable part number package shipping NXH160T120L2Q1PG (press fit) q1pack ? case 180ad (pb ? free and halide ? free) 21 units / blister tray nxh160t120l2q1sg (solder pin) q1pack ? case 180aq (pb ? free and halide ? free) 21 units / blister tray
pim30, 71x37.4 case 180ad issue e date 28 nov 201 7 generic marking diagram* xxxxxxxxxxxxxxxxxxxxxg atyyww xxxxx = specific device code g = pb?free package at = assembly & test site code yyww = year and work week code *this information is generic. please refer to device data sheet for actual part marking. pb?free indicator, ?g? or microdot ? ?, may or may not be present. some products may not follow the generic marking. mechanical case outline package dimensions http://onsemi.com 1 ? semiconductor components industries, llc, 2002 october, 2002 ? rev. 0 case outline number: xxx document number: status: new standard: description: 98aon07115g on semiconductor standard pim30 71x37.4 (press fit) electronic versions are uncontrolled except when accessed directly from the document repository. printed versions are uncontrolled except when stamped ?controlled copy? in red. page 1 of 2
document number: 98aon07115g page 2 of 2 issue revision date o released for production. req. by c. enriquez. 04 dec 2015 a modified top and side views and changed marking diagram. req. by a. lai. 26 feb 2016 b changed dimension table callouts from min & nom to min & max. req. by f. estrada. 01 feb 2017 c changed y position for pin 15. req. by a. lai. 09 may 2017 d updated marking diagram code information. req. by a. lai. 08 nov 2017 e modifed values a, a4, a5 & p2. req. by a. zhen. 28 nov 2017 ? semiconductor components industries, llc, 2017 november, 2017 ? rev. e case outline number : 180ad on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.
pim30, 71x37.4 case 180aq issue a date 25 jun 201 8 generic marking diagram* xxxxxxxxxxxxxxxxxxxxxg atyyww xxxxx = specific device code g = pb?free package at = assembly & test site code yyww = year and work week code *this information is generic. please refer to device data sheet for actual part marking. pb?free indicator, ?g? or microdot ? ?, may or may not be present. some products may not follow the generic marking. side view mechanical case outline package dimensions on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiari es in the united states and/or other countries. on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no wa rranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does on semiconductor assume any liability arising out of the a pplication or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. on semiconductor do es not convey any license under its patent rights nor the rights of others. 98aon86769g document number: description: electronic versions are uncontrolled except when accessed directly from the document repository. printed versions are uncontrolled except when stamped ?controlled copy? in red. page 1 of 1 pim30, 71x37.4 ? semiconductor components industries, llc, 2018 www.onsemi.com
on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?

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